Light‐Enhanced Negative Differential Resistance and Multi‐Level Resistive Switching in Glutamine‐Functionalized MoS₂ Quantum Dots for Resistive Random‐Access Memory Devices

Abstract Negative differential resistance (NDR) with multi‐level resistive switching has been investigated for realizing memory devices. However, achieving a high peak‐to‐valley ratio of NDR is formidable challenge reliable switch. Here, new type light‐enhanced device accompanied based on glutamine‐functionalized MoS 2 quantum dots demonstrated. By increasing the illuminated light power device, effect can be greatly enhanced and as 15.5 achieved. The tunneling transport carrier trapping interface states are responsible mechanism NDR. Multi‐level realized in same by adjusting power. A on/off ≈10 3 good endurance multi‐valued have achieved, exhibiting potential applications